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2N3904 データシート(PDF) 1 Page - KEC(Korea Electronics)

部品番号 2N3904
部品情報  EPITAXIAL PLANAR NPN TRANSISTOR
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メーカー  KEC [KEC(Korea Electronics)]
ホームページ  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

2N3904 データシート(HTML) 1 Page - KEC(Korea Electronics)

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2002. 9. 12
1/4
SEMICONDUCTOR
TECHNICAL DATA
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906.
MAXIMUM RATING (Ta=25
)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2 3
B
K
G
H
F
F
E
C
E
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Base Current
IB
50
mA
Collector Power
Dissipation
Ta=25
PC
625
mW
Tc=25
1.5
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150


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