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データシートサーチシステム |
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データシートサーチシステム |
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KDV142V データシート(PDF) 1 Page - KEC(Korea Electronics) |
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KDV142V データシート(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2006. 9. 8 1/2 SEMICONDUCTOR TECHNICAL DATA KDV142V SILICON EPITAXIAL PIN TYPE DIODE Revision No : 0 For antenna switches in mobile applications. FEATURES Low Capacitance : CT=0.35[pF] (Max.) Low Series resistance : rS=1.3[ ] (Max.) Small Package : ESC MAXIMUM RATING (Ta=25 ) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 30 V Forward Current IF 100 mA Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Current IR VR=30V - - 0.1 A Forward Voltage VF IF=10mA - - 1.0 V Total Capacitance CT VR=1V, f=1MHz - - 0.35 pF Series Resistance rs IF=10mA, f=100MHz - - 1.3 ESD-Capability * - C=200pF, R=0 , Both forward and reverse direction 1 pulse 100 - - * Failure cirterion : IR>100nA at VR=30V. VSC DIM MILLIMETERS A B C D E CATHODE MARK B A F 2 1 1. ANODE 2. CATHODE 1.4 0.05 + _ 1.0 0.05 + _ 0.12 0.03 + _ 0.5 0.05 + _ 0.28 0.03 + _ 0.6 0.05 + _ Marking PA 21 CATHODE MARK |
同様の部品番号 - KDV142V |
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同様の説明 - KDV142V |
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