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STK15C88-NF25I データシート(PDF) 9 Page - Cypress Semiconductor |
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STK15C88-NF25I データシート(HTML) 9 Page - Cypress Semiconductor |
9 / 17 page STK15C88 Document Number: 001-50593 Rev. *C Page 9 of 17 AC Switching Characteristics SRAM Read Cycle Parameter Description 25 ns 45 ns Unit Min Max Min Max Cypress Parameter Alt tACE tELQV Chip Enable Access Time – 25 – 45 ns tRC [5] tAVAV, tELEH Read Cycle Time 25 – 45 – ns tAA [6] tAVQV Address Access Time – 25 – 45 ns tDOE tGLQV Output Enable to Data Valid – 10 – 20 ns tOHA [6] tAXQX Output Hold After Address Change 5 – 5 – ns tLZCE [7] tELQX Chip Enable to Output Active 5 – 5 – ns tHZCE [7] tEHQZ Chip Disable to Output Inactive – 10 – 15 ns tLZOE [7] tGLQX Output Enable to Output Active 0 – 0 – ns tHZOE [7] tGHQZ Output Disable to Output Inactive – 10 – 15 ns tPU [4] tELICCH Chip Enable to Power Active 0 – 0 – ns tPD [4] tEHICCL Chip Disable to Power Standby – 25 – 45 ns Switching Waveforms Figure 5. SRAM Read Cycle 1: Address Controlled [5, 7] Figure 6. SRAM Read Cycle 2: CE and OE Controlled [5] Notes 5. WE must be HIGH during SRAM Read Cycles and LOW during SRAM WRITE cycles. 6. I/O state assumes CE and OE < VIL and WE > VIH; device is continuously selected. 7. Measured ±200 mV from steady state output voltage. [+] Feedback |
同様の部品番号 - STK15C88-NF25I |
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同様の説明 - STK15C88-NF25I |
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