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SML9030-T254 データシート(PDF) 2 Page - Seme LAB

部品番号 SML9030-T254
部品情報  P-CHANNEL MOS TRANSISTOR
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メーカー  SEME-LAB [Seme LAB]
ホームページ  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

SML9030-T254 データシート(HTML) 2 Page - Seme LAB

  SML9030-T254 Datasheet HTML 1Page - Seme LAB SML9030-T254 Datasheet HTML 2Page - Seme LAB  
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background image
-50
-0.060
0.14
-2
-4
5.9
-100
-500
-100
100
1100
620
100
34
9.9
16
18
120
20
58
-18
-72
-6.3
100
200
0.28
0.52
4.5
7.5
SML9030–T254
Prelim. 1/95
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = -250mA
Reference to 25°C
ID = -1mA
VGS = -10V
ID = -11A
VDS = VGS
ID = -250mA
VDS = -25V
ID = -11A
VDS = -60V
VGS = 0
VDS = -48V
VGS = 0
TJ = 125°C
VGS = -20V
VGS = 20V
VGS = 0
VDS = -25V
f = 1MHz
ID = -18A
VDS = -48V
VGS = -10V
VDD = -30V
ID = -18A
RG = 12W
RD = 1.5W
IS = -18A
TJ = 25°C
VGS = 0
IF = -18A
TJ = 25°C
di / dt = 100A/ms
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time 1
Rise Time 1
Turn–Off Delay Time 1
Fall Time 1
Continuous Source Current (Body Diode)
Pulse Source Current 2 (Body Diode)
Diode Forward Voltage 1
Reverse Recovery Time 1
Reverse Recovery Charge 1
V
V/ °C
W
V
S
mA
nA
pF
nC
nC
A
V
ns
mC
nH
BVDSS
DBVDSS
DTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
LD
LS
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
£ 300ms, d£ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from 6mm down lead to centre of drain bond pad)
Internal Source Inductance (from 6mm down lead to centre of source bond pad)
PACKAGE CHARACTERISTICS


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