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KF8N60P データシート(PDF) 4 Page - KEC(Korea Electronics)

部品番号 KF8N60P
部品情報  N CHANNEL MOS FIELD EFFECT TRANSISTOR
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メーカー  KEC [KEC(Korea Electronics)]
ホームページ  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KF8N60P データシート(HTML) 4 Page - KEC(Korea Electronics)

  KF8N60P_11 Datasheet HTML 1Page - KEC(Korea Electronics) KF8N60P_11 Datasheet HTML 2Page - KEC(Korea Electronics) KF8N60P_11 Datasheet HTML 3Page - KEC(Korea Electronics) KF8N60P_11 Datasheet HTML 4Page - KEC(Korea Electronics) KF8N60P_11 Datasheet HTML 5Page - KEC(Korea Electronics) KF8N60P_11 Datasheet HTML 6Page - KEC(Korea Electronics) KF8N60P_11 Datasheet HTML 7Page - KEC(Korea Electronics)  
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2011. 1. 27
4/7
KF8N60P/F
Revision No : 0
Gate - Charge Qg (nC)
0
12
10
6
2
4
8
28
32
12
4
20
16
24
8
0
Fig8. Qg- VGS
0
6
2
4
10
8
75
150
125
50
100
025
ID=8A
C
Junction Temperature Tj ( )
Fig11. ID - Tj
VDS = 480V
104
103
102
101
100
Drain - Source Voltage VDS (V)
Fig 7. C - VDS
010
520
15
30
35
25
40
Crss
Coss
Ciss
Fig9. Safe Operation Area
Fig10. Safe Operation Area
Drain - Source Voltage VDS (V)
101
10
1
10-1
100
10
0
10
2
10
2
10
3
(KF8N60P)
Tc= 25
Tj = 150
Single nonrepetitive pulse
C
C
DC
10ms
1ms
100
µs
10
µs
Operation in this
area is limited by RDS(ON)
Drain - Source Voltage VDS (V)
101
10
1
10-1
100
10
0
10
2
10
2
10
3
(KF8N60F)
Tc= 25
Tj = 150
Single nonrepetitive pulse
C
C
DC
10ms
1ms
100
µs
10
µs
Operation in this
area is limited by RDS(ON)


同様の部品番号 - KF8N60P_11

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