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BU323ZG データシート(PDF) 4 Page - ON Semiconductor |
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BU323ZG データシート(HTML) 4 Page - ON Semiconductor |
4 / 6 page BU323Z http://onsemi.com 4 Figure 4. Energy Test Criteria for BU323Z The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic dia- gram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a. The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d. ICPEAK (a) IC IC HIGH IC LOW VCE VGATE MIN ICPEAK IC IC HIGH IC LOW VCE VGATE MIN (b) ICPEAK IC IC HIGH IC LOW VCE VGATE MIN (c) ICPEAK IC IC HIGH IC LOW VCE VGATE MIN (d) |
同様の部品番号 - BU323ZG |
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同様の説明 - BU323ZG |
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