MJ14003G datasheet(2/5 Pages) ONSEMI

部品番号	MJ14003G

部品情報	High?묬urrent Complementary Silicon Power Transistors

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MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

0.584

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 200 mAdc, IB = 0)

MJ14001

MJ14002, MJ14003

VCEO(sus)

60

80

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

MJ14001

(VCE = 40 Vdc, IB = 0)

MJ14402, MJ14003

ICEO

−

1.0

mA

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 V)

MJ14001

(VCE = 80 Vdc, VBE(off) = 1.5 V)

MJ14002, MJ14003

ICEX

−

1.0

mA

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

MJ14001

(VCB = 80 Vdc, IE = 0)

MJ14002, MJ14003

ICBO

−

1.0

mA

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mA

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 25 Adc, VCE = 3.0 V)

(IC = 50 Adc, VCE = 3.0 V)

(IC = 60 Adc, VCE = 3.0 V)

hFE

30

15

5.0

−

100

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 25 Adc, IB = 2.5 Adc)

(IC = 50 Adc, IB = 5.0 Adc)

(IC = 60 Adc, IB = 12 Adc)

VCE(sat)

−

1.0

2.5

3.0

Vdc

Base−Emitter Saturation Voltage (Note 1)

(IC = 25 Adc, IB = 2.5 Adc)

(IC = 50 Adc, IB = 5.0 Adc)

(IC = 60 Adc, IB = 12 Adc)

VBE(sat)

−

2.0

3.0

4.0

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

−

2000

pF

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

100

Figure 2. Maximum Rated Forward Biased

Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0

2.0 3.0

5.0 7.0

100

20

3.0

10

20

50

0.5

0.1

dc

1.0 ms

0.2

0.3

0.7

1.0

2.0

5.0

7.0

10

50

30

70

30

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

TC = 25°C

5.0 ms

MJ14001

MJ14002, MJ14003

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation: i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 200_C. TJ(pk) may be calculated from the data in

Figure 13. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

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