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MJE344G データシート(PDF) 2 Page - ON Semiconductor

部品番号 MJE344G
部品情報  Plastic NPN Silicon Medium?뭁ower Transistor
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE344G データシート(HTML) 2 Page - ON Semiconductor

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MJE344
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
VCEO(sus)
200
Vdc
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
ICEO
1.0
mAdc
Collector Cutoff Current (VCB = 200 Vdc, IE = 0)
ICBO
0.1
mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
IEBO
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
300
Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
1.0
Vdc
Base−Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)
VBE(on)
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz)
fT
15
MHz
Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz)
Cob
15
pF
Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
1.0
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.01
0.5
0.1
0.05
0.02
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25°C
20
40
60
100
300
TJ = 150°C
1.0ms
dc
0.2
30
200
Figure 1. Active Region Safe Operating Area
500 ms
ALL
ALL
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
300
2.0
IC, COLLECTOR CURRENT (mA)
10
5.0
70
300 500
50
30
Figure 2. DC Current Gain
10
IC, COLLECTOR CURRENT (mA)
0.6
50
0.8
200
100
300
500
1.0
TJ = +25°C
TJ = +150°C
+100°C
70
20
200
100
20
3.0
7.0
50
1.0
100
20
30
200
0
0.2
0.4
Figure 3. “On” Voltages
+25 °C
−55 °C
VCE = 2.0 V
VCE = 10 V
10
IC/IB = 5.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10


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