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2SAR533D データシート(PDF) 1 Page - Rohm |
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2SAR533D データシート(HTML) 1 Page - Rohm |
1 / 6 page www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. Midium Power Transistors ( 50V / 3A) 2SAR533D Features Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2) High speed switching Structure PNP Silicon epitaxial planar transistor Inner circuit Applications Driver Package CPT3 Code TL Basic ordering unit (pieces) 2500 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V DC IC -3 A Pulsed ICP -6 A PD 1W PD 10 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a substrate. *3 Tc=25℃ Parameter Collector current Power dissipation Packaging specifications Type (1) (2) (3) *1 *2 *3 (1) Base (2) Collector (3) Emitter CPT3 6.5 2.3 (2) (3) 0.65 (1) 0.75 2.3 0.9 5.1 2.3 0.5 1.0 0.5 (1) Base (2) Collector (3) Emitter (1) (2) (3) 1/5 2010.07 - Rev.A |
同様の部品番号 - 2SAR533D |
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同様の説明 - 2SAR533D |
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