2N3810DCSM datasheet(2/4 Pages) SEME-LAB

部品番号	2N3810DCSM

部品情報	SILICON DUAL MATCHED PNP TRANSISTORS

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SILICON DUAL MATCHED

PNP TRANSISTORS

2N3810DCSM

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email: sales@semelab-tt.com

Website: http://www.semelab-tt.com

Document Number 2873

Issue 2

Page 2 of 4

ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CBO

Collector-Base

Breakdown Voltage

IC = -10µA

IE = 0

-60

V(BR)CEO

(2)

Collector-Emitter

Breakdown Voltage

IC = -10mA

IB = 0

-60

V(BR)EBO

Emitter-Base

Breakdown Voltage

IE = -10µA

IC = 0

-5

V

VCB = -50V

IE = 0

-10

nA

ICBO

Collector-Cut-Off

Current

TA = 150°C

-10

µA

IEBO

Emitter-Cut-Off

Current

VEB = -4V

IC = 0

-20

nA

IC = -10µA

VCE = -5V

100

IC = -100µA

VCE = -5V

150

450

TA = -55°C

60

IC = -500µA

VCE = -5V

150

450

IC = -1.0mA

VCE = -5V

150

450

hFE

(2)

Forward-current

transfer ratio

IC = -10mA

VCE = -5V

125

VBE

(2)

Base-Emitter Voltage

IC = -100µA

VCE = -5V

-0.7

IC = -100µA

IB = -10µA

-0.7

VBE(sat)

(2)

Base-Emitter

Saturation Voltage

IC = -1.0mA

IB = = -100µA

-0.8

V

IC = -100µA

IB = -10µA

-0.2

VCE(sat)

(2)

Collector-Emitter

Saturation Voltage

IC = -1.0mA

IB = = -100µA

-0.25

ELECTRICAL MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

2

FE

h

1

FE

h

(3)

Forward-current

transfer ratio (gain

ratio)

IC = -100µA

VCE = -5V

0.9

1.0

VCE = -5V

IC = -10µA to -10mA

5

|VBE1-VBE2|

Base-Emitter Voltage

Differential

VCE = -5V

IC = -100µA

3

mV

VCE = -5V

IC = -100µA

TA1 = 25°C

TA2 = -55°C

0.8

VCE = -5V

IC = -100µA

|∆(VBE1-VBE2)∆TA|

Base-Emitter Voltage

Differential Change

Due To Temperature

TA1 = 25°C

TA2 = 125°C

1.0

mV

Not

Notes

es

(2)

Pulse Width ≤ 300us, δ ≤ 2%

(3)

The lower of the two readings is taken as hFE1

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