データシートサーチシステム |
|
TS3DDR3812RUAR データシート(PDF) 4 Page - Texas Instruments |
|
|
TS3DDR3812RUAR データシート(HTML) 4 Page - Texas Instruments |
4 / 18 page TS3DDR3812 SCDS314A – FEBRUARY 2011 – REVISED MARCH 2011 www.ti.com RECOMMENDED OPERATING CONDITIONS (1) MIN MAX UNIT VCC Supply voltage 3 3.6 V VIH High-level control input voltage SEL1, SEL2 2 5.5 V VIL Low-level control input voltage SEL1, SEL2 0 0.8 V VIN Input voltage SEL1, SEL2 0 5.5 V VI/O Input/Output voltage 0 VCC V TA Operating free-air temperature –40 85 °C (1) All unused control inputs of the device must be held at VDD or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004 ELECTRICAL CHARACTERISTICS over recommended operating free-air temperature range, VCC = 3.3 V ± 0.3 V (unless otherwise noted) PARAMETER TEST CONDITIONS(1) MIN TYP(2) MAX UNIT VIK Digital input clamp voltage SEL1, SEL2 VCC = 3.6 V, IIN = –18 mA –1.2 –0.8 V RON ON-state resistance A, B, C VCC = 3 V, 1.5 V ≤ VI/O ≤ VCC, 8 12 Ω II/O = -40 mA RON(flat) (3) ON-state resistance flatness A, B, C VCC = 3 V, VI/O = 1.5 V and VCC, 1.5 Ω II/O = –40 mA ΔRON (4) On-state resistance match A, B, C VCC = 3 V, 1.5 V ≤ VI/O ≤ VCC, 0.4 1 Ω between channels II/O = –40 mA IIH Digital input high leakage SEL1, SEL2 VCC = 3.6 V , VIN = VDD ±1 µA current IIL Digital input low leakage SEL1, SEL2 VCC = 3.6 V, VIN = GND ±1 µA current IOFF Leakage under power off All outputs VCC = 0 V, VI/O = 0 to 3.6 V, VIN = 0 to 5.5 V ±1 µA conditions CIN Digital input capacitance SEL1, SEL2 f = 1 MHz, VIN = 0 V 2.6 3.2 pF COFF Switch OFF capacitance A, B, C f = 1 MHz, VI/O = 0 V, Output is open, 2 pF Switch is OFF CON Switch ON capacitance A, B, C f = 1 MHz, VI/O = 0 V, Output is open, 5.6 pF Switch is ON ICC VCC supply current VCC = 3.6 V, II/O = 0, VIN = VDD or GND 300 400 µA (1) VI, VO, II, and IO refer to I/O pins, VIN refers to the control inputs (2) All typical values are at VCC = 3.3V (unless otherwise noted), TA = 25°C (3) RON(FLAT) is the difference of RON in a given channel at specified voltages. (4) ΔRON is the difference of RON from center port (A5, A6) to any other ports. 4 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :TS3DDR3812 |
同様の部品番号 - TS3DDR3812RUAR |
|
同様の説明 - TS3DDR3812RUAR |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |