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NBXSBA025LN1TAG データシート(PDF) 3 Page - ON Semiconductor |
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NBXSBA025LN1TAG データシート(HTML) 3 Page - ON Semiconductor |
3 / 6 page NBXSBA025 http://onsemi.com 3 Table 5. DC CHARACTERISTICS (VDD = 2.5 V ± 5%, 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2) Symbol Characteristic Conditions Min. Typ. Max. Units IDD Power Supply Current 95 105 mA VIH OE Input HIGH Voltage 2000 VDD mV VIL OE Input LOW Voltage GND − 300 800 mV IIH Input HIGH Current OE −100 +100 mA IIL Input LOW Current OE −100 +100 mA VOH Output HIGH Voltage VDD−1195 VDD−945 mV VOL Output LOW Voltage VDD−1945 VDD−1600 mV VOUTPP Output Voltage Amplitude 700 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4. Table 6. AC CHARACTERISTICS (VDD = 2.5 V ± 5%, 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency 425.0000 MHz Df Frequency Stability (Note 4) ±50 ppm FNOISE Phase−Noise Performance fCLKout = 425.00 MHz (See Figure 3) 100 Hz of Carrier −97 dBc/Hz 1 kHz of Carrier −112 dBc/Hz 10 kHz of Carrier −118 dBc/Hz 100 kHz of Carrier −120 dBc/Hz 1 MHz of Carrier −126 dBc/Hz 10 MHz of Carrier −153 dBc/Hz tjit(F) RMS Phase Jitter 12 kHz to 20 MHz 0.5 0.7 ps tjitter Cycle to Cycle, RMS 1000 Cycles 1.5 8 ps Cycle to Cycle, Peak−to−Peak 1000 Cycles 9 30 ps Period, RMS 10,000 Cycles 0.9 4 ps Period, Peak−to−Peak 10,000 Cycles 7 20 ps tOE/OD Output Enable/Disable Time 200 ns tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 48 50 52 % tR Output Rise Time (20% and 80%) 250 400 ps tF Output Fall Time (80% and 20%) 250 400 ps tstart Start−up Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 ppm NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 4. 4. Parameter guarantee 10 years aging. Includes initial stability at 25°C, shock, vibration, and first year aging. |
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