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BY255 データシート(PDF) 1 Page - Diotec Semiconductor

部品番号 BY255
部品情報  Silicon Rectifier Diodes - Silizium-Gleichrichterdioden
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メーカー  DIOTEC [Diotec Semiconductor]
ホームページ  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BY255 データシート(HTML) 1 Page - Diotec Semiconductor

  BY255 Datasheet HTML 1Page - Diotec Semiconductor BY255 Datasheet HTML 2Page - Diotec Semiconductor  
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BY251 ... BY255, BY1600 ... BY2000
BY251 ... BY255, BY1600 ... BY2000
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2011-03-04
Dimensions - Maße [mm]
Nominal Current
Nennstrom
3 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
200...2000 V
Plastic case
Kunststoffgehäuse
~ DO-201
Weight approx.
Gewicht ca.
0.8 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
BY251
200
200
BY252
400
400
BY253
600
600
BY254
800
800
BY255
1300
1300
BY1600
1600
1600
BY1800
1800
1800
BY2000
2000
2000
higher voltages see
höhere Spannungen siehe
BY4...BY16
4000...16000
4000...16000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
3 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
20 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
100/110 A
Rating for fusing, Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
50 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 1.2±0.05
Ø 4.5+0.1
-0.3


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