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SI-8511NVS データシート(PDF) 2 Page - Sanken electric |
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SI-8511NVS データシート(HTML) 2 Page - Sanken electric |
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2 / 2 page  63 ICs SI-8511NVS ■External Dimensions (TSSOP24) (Unit : mm) ■Block Diagram (Pin Assignment) 13 12 24 1 0.4 0.50±0.2 3.00 7.9±0.2 7.80±0.1 0.375 TYP 0.65 A 0.22+0.1 –0.05 0.15 +0.1 –0.05 0.12 A M 0.08 S S 11° 11° 11 ° 11° Depth 0.02 to 0.08 2.0 Mirror surface φ Depth 0.02 to 0.08 1.0 Mirror surface φ VIN ILIM VIN FADJ FSET SS SKIP Open : Skip Mode L : No Skip Mode VCC2 VCC1 +5V VO VO ISEN VH DRVH LIN DRVL PGND VO VSNS OVP_SL 12 14 Level Shift Latch Buff Logic OSC Buff COMP + – – + Synchronous Cont. (Logic) UVLO Gate Driver OFF Clamp PRE_REG Vpreg PWRGD EN EN H : ON L : OFF POWER_GOOD H : GOOD L : NG GND Power Good Switching Constant On Time Cont. Open : Change Frequency Short : 400KHz Operation – + + + OCP SS ■Typical Connection Diagram + NC R1 5mΩ R5 10Ω R6 10Ω R4 47kΩ R12 R13 C3 0.1 F D1 SJPJ-L3 R11 : 100kΩ R8 : 200kΩ C8 : 220pF C4 : 3.3 Q2 F VCC EN SKIP C2 : 330 F VO VIN Q1 R2 C9 1000 pF R10 2.2kΩ PWRGD VCC R7 47kΩ R9 C6 0.1 ~ 1 F D2 : SFPL52 L1 : 10 H VCC : 5V C1 : 10 F µ C5 : 4.7 F µ µ µ µ C7 : 0.1 F µ µ µ SI-8511NVS 24 LIN 23 DRVL 22 PGND 21 VCC2 20 OVP_SL 19 VCC1 18 SS 17 EN 16 SKIP 15 FADJ 14 NC 13 NC 1 DRVH 2 VH 3 VIN 4 ISEN 5 ILIN 6 GND 7 VSNS 8 VO 9 PWRGD 10 REF 11 NC 12 Plastic Mold Package Type Flammability: UL94V-0 Product Mass: Approx. 1.36g MOS FET Q1, Q2 • Be sure to use logic type MOS FET as Q1 and Q2. If you use a normal power MOS FET type, the ON resistance may not drop to a satisfactory level due to a shortage of VGS. This may deteriorate the efficiency and cause overheating. Diode D1 • Be sure to use a Schottky-barrier diode for D1. If other diodes like fast recovery diodes are used, IC may be destroyed because of the reverse voltage generated by the recovery voltage or ON voltage. Choke coil L1 • If the winding resistance of the choke coil is too high, the efficiency may drop below the rated value. •Take care concerning heat radiation from the choke coil caused by magnetic saturation due to overload or short-circuit load. Capacitor C1, C2 • As large ripple currents flow through C1 and C2, use high-frequency and low- impedance capacitors suitable for switching mode power supplies. Especially when the impedance of C2 is high, the switching waveform may become abnor- mal at low temperatures. For C2, do not use a capacitor with an extremely low equivalent series resistance (ESR) such as a ceramic capacitor, which may cause an abnormal oscillation. *To create the optimum operating conditions, place the components as close as possible to each other. |
同様の部品番号 - SI-8511NVS_11 |
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同様の説明 - SI-8511NVS_11 |
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