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2N5039 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5039 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION ・With TO-3 package ・High speed ・Low collector saturation voltage APPLICATIONS ・They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5038 150 VCBO Collector-base voltage 2N5039 Open emitter 120 V 2N5038 90 VCEO Collector-emitter voltage 2N5039 Open base 75 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A ICM Collector current-peak 30 A IB Base current 5 A PD Total Power Dissipation TC=25℃ 140 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.25 ℃/W Fig.1 simplified outline (TO-3) and symbol |
同様の部品番号 - 2N5039 |
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同様の説明 - 2N5039 |
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