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1N4002GP データシート(PDF) 3 Page - Vishay Siliconix |
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1N4002GP データシート(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 88504 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4001GP thru 1N4007GP Vishay General Semiconductor Fig. 3 - Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Reverse Characteristics Fig. 6 - Typical Junction Capacitance Fig. 7 - Typical Transient Thermal Impedance 50 75 100 50 25 125 30 25 20 15 45 40 35 10 Ambient Temperature (°C) Square Waveform t p t p = 1 ms t p = 5 ms t p = 2 ms 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) T J = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0 0.01 0.1 1 10 60 80 100 20 40 T J = 25 °C T J = 100 °C Percent of Rated Peak Reverse Voltage (%) 0.1 10 1 100 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.01 0.1 10 1 100 0.1 10 100 1 t - Pulse Duration (s) |
同様の部品番号 - 1N4002GP |
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同様の説明 - 1N4002GP |
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