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LA6581CL データシート(PDF) 5 Page - Sanyo Semicon Device |
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LA6581CL データシート(HTML) 5 Page - Sanyo Semicon Device |
5 / 5 page LA6581CL PS No.A0706-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Application Circuit Example GND VCC FG OUT1 OUT2 IN+ IN− HB *1 Di Cr *2 R2 *3 IN+ IN− HB *5 *4 R1 R2 H H LA6581CL Elements in substrate *1 : When Di to prevent breakdown in case of reverse connection is used, it is necessary to insert a capacitor Cr to secure the regenerative current route. Similarly, Cr is necessary to enhance the reliability when there is no capacitor near the fan power line. *2 : To obtain Hall bias from VCC, carry out 1/2 × VCC bias as shown in the figure. Linear driving is made through voltage control of the coil by amplifying the Hall output. When the Hall element output is large, the startup performance and efficiency are improved. Adjustment of the Hall element can reduce the noise further. *3 : When the Hall bias is taken from the HB pin, constant-voltage bias is made with about 2.0V. Therefore, the Hall element can provide the output satisfactory in temperature characteristics. Adjustment of the Hall output amplitude is made with R1. (When VCC = 12V, the step *2 above proves advantageous for IC heat generation.) *4 : Keep this open when not used. *5 : When the wiring from the Hall output to IC Hall input is long, noise may be carried through the wiring. This catalog provides information as of March, 2009. Specifications and information herein are subject to change without notice. |
同様の部品番号 - LA6581CL_09 |
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同様の説明 - LA6581CL_09 |
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