データシートサーチシステム |
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BYG21M データシート(PDF) 3 Page - Vishay Siliconix |
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BYG21M データシート(HTML) 3 Page - Vishay Siliconix |
3 / 5 page BYG21K & BYG21M Vishay General Semiconductor Document Number: 88961 Revision: 11-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Reverse Current vs. Junction Temperature Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature Figure 5. Diode Capacitance vs. Reverse Voltage 1 10 100 25 50 75 100 125 150 Junction Temperature (°C) V R = VRRM 0 20 40 60 80 100 120 25 50 75 100 125 150 Junction Temperature (°C) V R = VRRM P R - Limit at 100 % V R P R - Limit at 80 % V R 0 5 10 15 20 25 0.1 1 10 100 f = 1 MHz Reverse Voltage (V) Figure 6. Max. Reverse Recovery Charge vs. Forward Current Figure 7. Thermal Response T A = 125 °C 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1.0 Forward Current (A) T A = 100 °C T A = 25 °C T A = 75 °C T A = 50 °C I R = 0.5 A, iR = 0.125 A 1 10 100 1000 Pulse Length (s) 10-5 10-4 10-3 10-2 10-1 100 101 102 Single Pulse 125 K/W DC t P/T = 0.5 t P/T = 0.2 t P/T = 0.1 t P/T = 0.05 t P/T = 0.02 t P/T = 0.01 |
同様の部品番号 - BYG21M |
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同様の説明 - BYG21M |
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