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2SC4370 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4370 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4370 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) Base Current 0.15 A PC Collector Power Dissipation @TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website:www.iscsemi.cn |
同様の部品番号 - 2SC4370 |
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同様の説明 - 2SC4370 |
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