BD241B datasheet(1/3 Pages) ISC

部品番号	BD241B

部品情報	Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD241/A/B/C

DESCRIPTION

・

・With TO-220C package

・Complement to type BD242/A/B/C

APPLICATIONS

・For medium power linear and

switching applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD241

55

BD241A

70

BD241B

90

VCBO

Collector-base voltage

BD241C

Open emitter

115

V

BD241

45

BD241A

60

BD241B

80

VCEO

Collector-emitter voltage

BD241C

Open base

100

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

3

A

ICM

Collector current-peak

5

A

IB

Base current

1

A

PC

Collector power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

同様の部品番号 - BD241B

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	BD241B	133Kb / 3P	POWER TRANSISTORS(3A,40W)
Savantic, Inc.	BD241B	90Kb / 3P	Silicon NPN Power Transistors
Motorola, Inc	BD241B	139Kb / 6P	Complementary Silicon Plastic Power Transistors
Comset Semiconductor	BD241B	104Kb / 3P	MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
ON Semiconductor	BD241B	108Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON

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同様の説明 - BD241B

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Boca Semiconductor Corp...	2N6676	144Kb / 3P	NPN SILICON POWER TRANSISTORS
ON Semiconductor	TIP47	199Kb / 6P	POWER TRANSISTORS NPN SILICON 1995 REV 1
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