HFA200FA120P datasheet(2/8 Pages) VISHAY

部品番号	HFA200FA120P

部品情報	HEXFRED Ultrafast Soft Recovery Diode, 200 A

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メーカー	VISHAY [Vishay Siliconix]

ホームページ	http://www.vishay.com

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For technical questions within your region, please contact one of the following:

Document Number: 94607

2

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 22-Jul-10

HFA200FA120P

Vishay Semiconductors

HEXFRED®

Ultrafast Soft Recovery Diode, 200 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Reverse recovery time

trr

TJ = 25 °C

IF = 50 A

dIF/dt = - 200 A/μs

VR = 200 V

-

150

-

ns

TJ = 125 °C

-

237

-

Peak recovery current

IRRM

TJ = 25 °C

-

14

-

A

TJ = 125 °C

-

21

-

Reverse recovery charge

Qrr

TJ = 25 °C

-

1050

-

nC

TJ = 125 °C

-

2430

-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Junction to case, single leg conducting

RthJC

--

0.3

°C/W

Junction to case, both legs conducting

-

0.15

Case to heatsink

RthCS

Flat, greased and surface

-

0.05

-

Weight

-30

-

g

Mounting torque

-1.3

-

Nm

同様の部品番号 - HFA200FA120P

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	HFA200FA120P	111Kb / 8P	HEXFRED짰 Ultrafast Soft Recovery Diode, 200 A 02-Oct-12
Vishay Siliconix	HFA200FA120P	111Kb / 8P	HEXFRED짰 Ultrafast Soft Recovery Diode, 200 A 02-Oct-12

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