データシートサーチシステム
Selected language   Japanese  ▼

Delete All
ON OFF
ALLDATASHEET.JP

X  

Preview PDF Download HTML

IRF510S データシート(PDF) 2 Page - Vishay Siliconix

部品番号. IRF510S
部品情報  Power MOSFET
ダウンロード  9 Pages
Scroll/Zoom Zoom In 100% Zoom Out
メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF510S Datasheet(HTML) 2 Page - Vishay Siliconix

  IRF510S データシート HTML 1Page - Vishay Siliconix IRF510S データシート HTML 2Page - Vishay Siliconix IRF510S データシート HTML 3Page - Vishay Siliconix IRF510S データシート HTML 4Page - Vishay Siliconix IRF510S データシート HTML 5Page - Vishay Siliconix IRF510S データシート HTML 6Page - Vishay Siliconix IRF510S データシート HTML 7Page - Vishay Siliconix IRF510S データシート HTML 8Page - Vishay Siliconix IRF510S データシート HTML 9Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
www.vishay.com
Document Number: 91016
2
S11-1044-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF510S, SiHF510S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
 300 μs; duty cycle  2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-62
°C/W
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-40
Maximum Junction-to-Case (Drain)
RthJC
-3.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
100
-
-
V
VDS Temperature Coefficient
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.12
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
-
-
25
μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 3.4 Ab
-
-
0.54
Forward Transconductance
gfs
VDS = 50 V, ID = 3.4 Ab
1.3
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
180
-
pF
Output Capacitance
Coss
-81
-
Reverse Transfer Capacitance
Crss
-15
-
Total Gate Charge
Qg
VGS = 10 V
ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b
--
8.3
nC
Gate-Source Charge
Qgs
--
2.3
Gate-Drain Charge
Qgd
--
3.8
Turn-On Delay Time
td(on)
VDD = 50 V, ID = 5.6 A,
Rg = 24 , RD = 8.4 , see fig. 10b
-6.9
-
ns
Rise Time
tr
-16
-
Turn-Off Delay Time
td(off)
-15
-
Fall Time
tf
-9.4
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
5.6
A
Pulsed Diode Forward Currenta
ISM
--
20
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.6 A, VGS = 0 Vb
--
2.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb
-
100
200
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.44
0.88
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


Html ページ

1  2  3  4  5  6  7  8  9 


Datasheet Download

Go To PDF Page


リンク URL



Privacy Policy
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   ブックマーク
   |   リンク交換   |   メーカーリスト
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn