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IRFD020PBF データシート(PDF) 1 Page - Vishay Siliconix

部品番号 IRFD020PBF
部品情報  Power MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFD020PBF データシート(HTML) 1 Page - Vishay Siliconix

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Document Number: 91465
www.vishay.com
S11-0915-Rev. A, 16-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRFD020, SiHFD020
Vishay Siliconix
FEATURES
• For Automatic Insertion
• Compact, End Stackable
•Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very
low
on-state
resistance
combined
with
high
transconductance
and
extreme
device
ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards
for
computers,
printers,
telecommunications
equipment, and consumer products. Their compatibility with
automatic
insertion
equipment,
low-profile
and
end
stackable features represent the stat-of-the-art in power
device packaging.
Notes
a. TJ = 25 °C to 150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
50
RDS(on) ()VGS = 10 V
0.10
Qg (Max.) (nC)
24
Qgs (nC)
7.1
Qgd (nC)
7.1
Configuration
Single
N-Channel MOSFET
G
D
S
HVMDIP
D
S
G
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
HVMDIP
Lead (Pb)-free
IRFD020PbF
SiHFD020-E3
SnPb
IRFD020
SiHFD020
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltagea
VDS
50
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
2.4
A
TC = 100 °C
1.5
Pulsed Drain Currentb
IDM
19
Linear Derating Factor
0.0080
W/°C
Inductive Current, Clamped
L = 100 μH
ILM
19
A
Unclamped Inductive Current (Avalanche Current)c
IL
2.2
Maximum Power Dissipation
TC = 25 °C
PD
1.0
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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