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IRFD020PBF データシート(PDF) 1 Page - Vishay Siliconix |
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IRFD020PBF データシート(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91465 www.vishay.com S11-0915-Rev. A, 16-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRFD020, SiHFD020 Vishay Siliconix FEATURES • For Automatic Insertion • Compact, End Stackable •Fast Switching • Ease of Paralleling • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging. Notes a. TJ = 25 °C to 150 °C b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 50 RDS(on) ()VGS = 10 V 0.10 Qg (Max.) (nC) 24 Qgs (nC) 7.1 Qgd (nC) 7.1 Configuration Single N-Channel MOSFET G D S HVMDIP D S G Available RoHS* COMPLIANT ORDERING INFORMATION Package HVMDIP Lead (Pb)-free IRFD020PbF SiHFD020-E3 SnPb IRFD020 SiHFD020 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltagea VDS 50 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 2.4 A TC = 100 °C 1.5 Pulsed Drain Currentb IDM 19 Linear Derating Factor 0.0080 W/°C Inductive Current, Clamped L = 100 μH ILM 19 A Unclamped Inductive Current (Avalanche Current)c IL 2.2 Maximum Power Dissipation TC = 25 °C PD 1.0 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
同様の部品番号 - IRFD020PBF |
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同様の説明 - IRFD020PBF |
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