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IRLZ44S データシート(PDF) 1 Page - Vishay Siliconix |
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IRLZ44S データシート(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91329 www.vishay.com S11-1055-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRLZ44S, SiHLZ44S Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive •RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature •Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 , IAS = 51 A (see fig. 12). c. ISD 51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). f. Current limited by the package, (die current = 51 A). PRODUCT SUMMARY VDS (V) 60 RDS(on) ()VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHLZ44S-GE3 SiHLZ44STRR-GE3a Lead (Pb)-free IRLZ44SPbF IRLZ44STRRPbFa SiHLZ44S-E3 SiHLZ44STR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Currentf VGS at 5.0 V TC = 25 °C ID 50 A Continuous Drain Current TC = 100 °C 36 Pulsed Drain Currenta IDM 200 Linear Derating Factor 1.0 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 400 mJ Maximum Power Dissipation TC = 25 °C PD 150 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.7 Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature)d for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
同様の部品番号 - IRLZ44S |
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同様の説明 - IRLZ44S |
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