BAS40W datasheet(1/4 Pages) SIEMENS

部品番号	BAS40W

部品情報	Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

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Semiconductor Group

1

02.96

Type

Ordering Code

Pin Configuration

Marking

Package1)

(tape and reel)

1

2

3

BAS 40-04W

BAS 40-05W

BAS 40-06W

Q62702-A1065

Q62702-A1066

Q62702-A1067

A1

C1

A2

C2

C1/A2

C1/C2

A1/A2

44s

45s

46s

SOT-323

Maximum Ratings

Parameter

Symbol

Values

Unit

Reverse voltage

V

R

40

V

Forward current

I

F

120

mA

Surge forward current,

t

≤ 10 ms

I

FSM

200

mA

Total power dissipation

T

S ≤ 106 °C

P

tot

250

mW

Junction temperature

T

j

150

°C

Operating temperature range

T

op

– 55 … + 150

°C

Storage temperature range

T

stg

– 55 … + 150

°C

Thermal Resistance

Junction-ambient2)

R

th JA

≤ 395

K/W

Junction-soldering point

R

th JS

≤ 175

K/W

1) For detailed information see chapter Package Outlines.

2) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2 Cu.

Silicon Schottky Diode

BAS 40W

q

General-purpose diodes for

high-speed switching

q

Circuit protection

q

Voltage clamping

q

High-level detecting and mixing

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