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SB320A データシート(PDF) 1 Page - Vishay Siliconix

部品番号 SB320A
部品情報  Schottky Barrier Rectifier
Download  4 Pages
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SB320A データシート(HTML) 1 Page - Vishay Siliconix

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Document Number: 88925
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Schottky Barrier Rectifier
SB320A thru SB360A
Vishay General Semiconductor
Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High frequency operation
• 20 kV ESD capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V to 60 V
IFSM
80 A
VF
0.50 V, 0.70 V
TJ max.
150 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB320A
SB330A
SB340A
SB350A
SB360A
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R = 1.5 k
VC
20
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C


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