SI1035X datasheet(1/10 Pages) VISHAY

部品番号	SI1035X

部品情報	Complementary N- and P-Channel 20 V (D-S) MOSFET

Download	10 Pages

Scroll/Zoom	100%

メーカー	VISHAY [Vishay Siliconix]

ホームページ	http://www.vishay.com

Logo

1 / 10 page

Vishay Siliconix

Si1035X

Document Number: 71426

S10-2544-Rev. C, 08-Nov-10

www.vishay.com

1

Complementary N- and P-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET: 1.5 V Rated

•

Very Small Footprint

•

High-Side Switching

•

Low On-Resistance:

N-Channel, 5



P-Channel, 8



•

Low Threshold: ± 0.9 V (typ.)

•

Fast Switching Speed: 45 ns (typ.)

•

1.5 V Operation

•

Gate-Source ESD Protected: 2000 V

•

Compliant to RoHS Directive 2002/95/EC

BENEFITS

•

Ease in Driving Switches

•

Low Offset (Error) Voltage

•

Low-Voltage Operation

•

High-Speed Circuits

•

Low Battery Voltage Operation

APPLICATIONS

•

Replace Digital Transistor, Level-Shifter

•

Battery Operated Systems

•

Power Supply Converter Circuits

•

Load/Power Switching Cell Phones, Pagers

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (mA)

N-Channel

20

5 at VGS = 4.5 V

200

7 at VGS = 2.5 V

175

9 at VGS = 1.8 V

150

10 at VGS = 1.5 V

50

P-Channel

- 20

8 at VGS = - 4.5 V

- 150

12 at VGS = - 2.5 V

- 125

15 at VGS = - 1.8 V

- 100

20 at VGS = - 1.5 V

- 30

Marking Code: M

Top View

3

1

D2

G2

S1

5

2

4

6

D1

S2

G1

SC-89

Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Surface mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

5 s

Steady State

5 s

Steady State

Drain-Source Voltage

VDS

20

- 20

V

Gate-Source Voltage

VGS

± 5

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

190

180

- 155

- 145

mA

TA = 85 °C

140

130

- 110

- 105

Pulsed Drain Currentb

IDM

650

- 650

Continuous Source Current (Diode Conduction)

IS

450

380

- 450

- 380

Maximum Power Dissipationa

TA = 25 °C

PD

280

250

280

250

mW

TA = 85 °C

145

130

145

130

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Gate-Source ESD Rating (HBM, Method 3015)

ESD

2000

V

同様の部品番号 - SI1035X

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1035X	53Kb / 7P	Complementary N- and P-Channel 20-V (D-S) MOSFET Rev. A, 12-Mar-01
	SI1035X	127Kb / 8P	Complementary N- and P-Channel 20-V (D-S) MOSFET Rev. B, 24-Mar-08
	SI1035X	160Kb / 10P	Complementary N- and P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI1035X-T1-E3	127Kb / 8P	Complementary N- and P-Channel 20-V (D-S) MOSFET Rev. B, 24-Mar-08
	SI1035X-T1-GE3	127Kb / 8P	Complementary N- and P-Channel 20-V (D-S) MOSFET Rev. B, 24-Mar-08

More results

同様の説明 - SI1035X

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1016CX	200Kb / 12P	Complementary N- and P-Channel 20 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI1035X	160Kb / 10P	Complementary N- and P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI1016X	53Kb / 7P	Complementary N and P-Channel 20-V (D-S) MOSFET Rev. A, 08-Feb-01
	SI1016CX	240Kb / 12P	Complementary N- and P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI1016X	159Kb / 10P	Complementary N- and P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI1016X	107Kb / 8P	Complementary N- and P-Channel 20-V (D-S) MOSFET S-80427-Rev. D, 03-Mar-08
	SI1035X	127Kb / 8P	Complementary N- and P-Channel 20-V (D-S) MOSFET Rev. B, 24-Mar-08
	SI1035X	53Kb / 7P	Complementary N- and P-Channel 20-V (D-S) MOSFET Rev. A, 12-Mar-01
Vishay Telefunken	SI1016CX	237Kb / 12P	Complementary N- and P-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI1016X-T1	216Kb / 17P	Complementary N- and P-Channel 20-V (D-S) MOSFET Rev. D, 03-Mar-08