SI1972DH datasheet(2/4 Pages) VISHAY

部品番号	SI1972DH

部品情報	N-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

SPICE Device Model Si1972DH

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.5

V

On-State Drain Current

a

ID(on)

VDS ≥ 5 V, VGS = 10 V

29

A

VGS = 10 V, ID = 1.3 A

0.146

0.155

Drain-Source On-State Resistance

a

rDS(on)

VGS = 4.5 V, ID = 0.29 A

0.276

0.278

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 1.3 A

2.1

1.4

S

Forward Voltage

a

VSD

IS = 1.2 A

0.88

0.85

V

Dynamic

b

Input Capacitance

Ciss

88

75

Output Capacitance

Coss

18

Reverse Transfer Capacitance

Crss

VDS = 15 V, VGS = 0 V, f = 1 MHz

6.8

6

pF

VDS = 15 V, VGS = 10 V, ID = 1.3 A

1.3

1.85

Total Gate Charge

Qg

0.70

0.91

Gate-Source Charge

Qgs

0.51

Gate-Drain Charge

Qgd

VDS = 15 V, VGS = 4.5 V, ID = 1.3 A

0.30

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 74379

S-70411

Rev. A, 05-Mar-07

同様の部品番号 - SI1972DH

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1972DH	120Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 27-Nov-06
	SI1972DH	120Kb / 7P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 29-Mar-10
	SI1972DH	121Kb / 7P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SI1972DH-T1-E3	120Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 27-Nov-06
	SI1972DH	120Kb / 7P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 29-Mar-10

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