SI3424CDV datasheet(2/11 Pages) VISHAY

部品番号	SI3424CDV

部品情報	N-Channel 30 V (D-S) MOSFET

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Document Number: 67443

S11-0863-Rev. A, 02-May-11

Vishay Siliconix

Si3424CDV

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

30

V

VDS Temperature Coefficient

VDS/TJ

ID = 250 µA

28

mV/°C

VGS(th) Temperature Coefficient

VGS(th)/TJ

- 3.7

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

12.5

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 85 °C

10

On-State Drain Currenta

ID(on)

VDS =  5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 7.2 A

0.021

0.026



VGS = 4.5 V, ID = 6.5 A

0.026

0.032

Forward Transconductance

gfs

VDS = 15 V, ID = 7.2 A

17

S

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

405

pF

Output Capacitance

Coss

92

Reverse Transfer Capacitance

Crss

42

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 7.2 A

8.3

12.5

nC

VDS = 24 V, VGS = 4.5 V, ID = 7.2 A

4.2

6.3

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

1.6

Gate Resistance

Rg

f = 1 MHz

0.6

3

6



Turn-On Delay Time

td(on)

VDD = 15 V, RL = 2.6 

ID  5.7 A, VGEN = 10 V, Rg = 1 

36

ns

Rise Time

tr

12

20

Turn-Off DelayTime

td(off)

16

24

Fall Time

tf

816

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 2.6 

ID  5.7 A, VGEN = 4.5 V, Rg = 1 

10

20

Rise Time

tr

22

33

Turn-Off DelayTime

td(off)

15

23

Fall Time

tf

918

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

IS

TC = 25 °C

3

A

Pulse Diode Forward Currenta

ISM

20

Body Diode Voltage

VSD

IS = 5.7 A

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 5.7 A, dI/dt = 100 A/µs

13

20

nC

Body Diode Reverse Recovery Charge

Qrr

510

ns

Reverse Recovery Fall Time

ta

8

Reverse Recovery Rise Time

tb

5

同様の部品番号 - SI3424CDV

メーカー	部品番号	データシート	部品情報
Vishay Telefunken	SI3424CDV	217Kb / 11P	N-Channel 30 V (D-S) MOSFET
VBsemi Electronics Co.,...	SI3424CDV	1,005Kb / 9P	N-Channel 30 V (D-S) MOSFET
Vishay Siliconix	SI3424CDV	247Kb / 11P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022

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