データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

SI3932DV-T1-GE3 データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI3932DV-T1-GE3
部品情報  Dual N-Channel 30 V (D-S) MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3932DV-T1-GE3 データシート(HTML) 2 Page - Vishay Siliconix

  SI3932DV-T1-GE3 Datasheet HTML 1Page - Vishay Siliconix SI3932DV-T1-GE3 Datasheet HTML 2Page - Vishay Siliconix SI3932DV-T1-GE3 Datasheet HTML 3Page - Vishay Siliconix SI3932DV-T1-GE3 Datasheet HTML 4Page - Vishay Siliconix SI3932DV-T1-GE3 Datasheet HTML 5Page - Vishay Siliconix SI3932DV-T1-GE3 Datasheet HTML 6Page - Vishay Siliconix SI3932DV-T1-GE3 Datasheet HTML 7Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
www.vishay.com
2
Document Number: 65736
S10-0642-Rev. A, 22-Mar-10
Vishay Siliconix
Si3932DV
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
29
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 4
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
1.2
2.2
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 3.4 A
0.047
0.058
Ω
VGS = 4.5 V, ID = 3.0 A
0.058
0.073
Forward Transconductancea
gfs
VDS = 15 V, ID = 3.4 A
10
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
235
pF
Output Capacitance
Coss
45
Reverse Transfer Capacitance
Crss
16
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 3.4 A
3.7
6
nC
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
1.8
3
Gate-Source Charge
Qgs
0.74
Gate-Drain Charge
Qgd
0.42
Gate Resistance
Rg
f = 1 MHz
1
5
10
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 5.6 Ω
ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω
10
20
ns
Rise Time
tr
15
30
Turn-Off Delay Time
td(off)
10
20
Fall Time
tf
10
20
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 5.6 Ω
ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω
510
Rise Time
tr
15
30
Turn-Off Delay Time
td(off)
10
20
Fall Time
tf
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.17
A
Pulse Diode Forward Current
ISM
15
Body Diode Voltage
VSD
IS = 2.7 A, VGS = 0 V
0.85
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C
10
20
ns
Body Diode Reverse Recovery Charge
Qrr
410
nC
Reverse Recovery Fall Time
ta
6
ns
Reverse Recovery Rise Time
tb
4


同様の部品番号 - SI3932DV-T1-GE3

メーカー部品番号データシート部品情報
logo
Vishay Siliconix
SI3932DV-T1-GE3 VISHAY-SI3932DV-T1-GE3 Datasheet
254Kb / 11P
   Dual N-Channel 30 V (D-S) MOSFET
01-Jan-2022
logo
Infineon Technologies A...
SI3932DV-T1-GE3 INFINEON-SI3932DV-T1-GE3 Datasheet
2Mb / 20P
   Single-channel isolated gate driver IC with adjustable DESAT and soft-off
v1.0 2020-05-27
logo
VBsemi Electronics Co.,...
SI3932DV-T1-GE3 VBSEMI-SI3932DV-T1-GE3 Datasheet
513Kb / 9P
   Dual N-Channel 20 V (D-S) MOSFET
More results

同様の説明 - SI3932DV-T1-GE3

メーカー部品番号データシート部品情報
logo
Vishay Siliconix
SI7212DN VISHAY-SI7212DN Datasheet
94Kb / 6P
   Dual N-Channel 30-V (D-S) MOSFET
Rev. B, 13-Jun-05
logo
DinTek Semiconductor Co...
DTM4936 DINTEK-DTM4936 Datasheet
294Kb / 9P
   Dual N-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI4932DY VISHAY-SI4932DY Datasheet
111Kb / 7P
   Dual N-Channel 30-V (D-S) MOSFET
Rev. A, 22-Dec-08
SIZ340DT VISHAY-SIZ340DT Datasheet
372Kb / 14P
   Dual N-Channel 30 V (D-S) MOSFET
Rev. B, 24-Mar-14
logo
Analog Power
AM6926NH ANALOGPOWER-AM6926NH Datasheet
398Kb / 5P
   Dual N-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI4276DY-T1-E3 VISHAY-SI4276DY-T1-E3 Datasheet
232Kb / 14P
   Dual N-Channel 30 V (D-S) MOSFET
Rev. A, 11-Apr-11
SI4276DY VISHAY-SI4276DY Datasheet
304Kb / 15P
   Dual N-Channel 30 V (D-S) MOSFET
Rev. A, 31-May-10
SI5906DU VISHAY-SI5906DU Datasheet
164Kb / 10P
   Dual N-Channel 30-V (D-S) MOSFET
Rev. A, 20-Jul-09
SI7212DN VISHAY-SI7212DN_09 Datasheet
549Kb / 12P
   Dual N-Channel 30-V (D-S) MOSFET
Rev. F, 14-Sep-09
logo
Analog Power
AM4934N ANALOGPOWER-AM4934N Datasheet
95Kb / 3P
   Dual N-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI4936ADY VISHAY-SI4936ADY Datasheet
61Kb / 4P
   Dual N-Channel 30-V (D-S) MOSFET
Rev. B, 13-Oct-03
More results


Html Pages

1 2 3 4 5 6 7


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com