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SI4124DY-T1-E3 データシート(PDF) 4 Page - Vishay Siliconix |
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SI4124DY-T1-E3 データシート(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 68601 S09-0392-Rev. B, 09-Mar-09 Vishay Siliconix Si4124DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 V SD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5mA T J - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.01 0.02 0.03 012 345 67 8 910 TJ = 25 °C TJ = 125 °C ID =14A V GS - Gate-to-Source Voltage (V) 0 34 68 102 136 170 0 1 1 1 0 0 . 0 0.01 0.1 Time (s) Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 10 ms 100 ms 100 s, DC BVDSS Limited 1 ms 100 µs 1 s 10 s V DS - Drain-to-Source Voltage (V) * V DS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* TA = 25 °C Single Pulse |
同様の部品番号 - SI4124DY-T1-E3 |
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同様の説明 - SI4124DY-T1-E3 |
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