SI4186DY datasheet(3/10 Pages) VISHAY

部品番号	SI4186DY

部品情報	N-Channel 20-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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Document Number: 65152

S09-1532-Rev. A, 10-Aug-09

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Vishay Siliconix

Si4186DY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

14

28

42

56

70

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.0015

0.0019

0.0023

0.0027

0.0031

0.0035

014

28

42

56

70

VGS =4.5 V

VGS =10 V

ID - Drain Current (A)

0

2

4

6

8

10

0

13263952

65

VDS =10 V

VDS =5 V

ID =10A

VDS =15 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

1

234

5

TC = 25 °C

TC = 125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

900

1800

2700

3600

4500

04

8

12

16

20

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

ID =15A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

同様の部品番号 - SI4186DY

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI4186DY	217Kb / 9P	N-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI4186DY-T1-GE3	228Kb / 9P	N-Channel 20 V (D-S) MOSFET 09-Jul-2021
	SI4186DY	228Kb / 9P	N-Channel 20 V (D-S) MOSFET 09-Jul-2021
	SI4186DY	217Kb / 9P	N-Channel 20 V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SI4186DY

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