SI4204DY-T1-GE3 datasheet(5/10 Pages) VISHAY

部品番号	SI4204DY-T1-GE3

部品情報	Dual N-Channel 20 V MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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5 / 10 page

Document Number: 65154

S10-1042-Rev. A, 03-May-10

www.vishay.com

5

Vishay Siliconix

Si4204DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

5

10

15

20

25

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Foot

0.0

0.8

1.6

2.4

3.2

4.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating, Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

同様の部品番号 - SI4204DY-T1-GE3

メーカー	部品番号	データシート	部品情報
Vishay Telefunken	SI4204DY	263Kb / 10P	Dual N-Channel 20 V MOSFET
Vishay Siliconix	SI4204DY	194Kb / 9P	Dual N-Channel 20 V MOSFET 09-Jul-2021
Vishay Siliconix	SI4204DY	194Kb / 9P	Dual N-Channel 20 V MOSFET 09-Jul-2021

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同様の説明 - SI4204DY-T1-GE3

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