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SI4276DY-T1-GE3 データシート(PDF) 3 Page - Vishay Siliconix |
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SI4276DY-T1-GE3 データシート(HTML) 3 Page - Vishay Siliconix |
3 / 15 page Document Number: 66599 S10-1289-Rev. A, 31-May-10 www.vishay.com 3 Vishay Siliconix Si4276DY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Turn-On Delay Time td(on) Channel 1 VDD = 15 V, RL = 2 Ω ID ≅ 7.6 A, VGEN = 10 V, Rg = 1 Ω Channel 2 VDD = 15 V, RL = 2.7 Ω ID ≅ 5.5 A, VGEN = 10 V, Rg = 1 Ω Ch 1 8 16 ns Ch 2 4 8 Rise Time tr Ch 1 10 20 Ch 2 8 16 Turn-Off DelayTime td(off) Ch 1 20 30 Ch 2 11 20 Fall Time tf Ch 1 7 14 Ch 2 7 14 Turn-On Delay Time td(on) Channel 1 VDD = 15 V, RL = 2 Ω ID ≅ 7.6 A, VGEN = 4.5 V, Rg = 1 Ω Channel 2 VDD = 15 V, RL = 2.7 Ω ID ≅ 5.5 A, VGEN = 4.5 V, Rg = 1 Ω Ch 1 14 21 Ch 2 8 16 Rise Time tr Ch 1 11 20 Ch 2 10 20 Turn-Off Delay Time td(off) Ch 1 18 27 Ch 2 10 20 Fall Time tf Ch 1 7 14 Ch 2 7 14 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C Ch 1 3 A Ch 2 2.3 Pulse Diode Forward Currenta ISM Ch 1 50 Ch 2 30 Body Diode Voltage VSD IS = 7.6 A Ch 1 0.82 1.2 V IS = 5.5 A Ch 2 0.85 1.2 Body Diode Reverse Recovery Time trr Channel 1 IF = 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C Channel 2 IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C Ch 1 20 30 ns Ch 2 13 20 Body Diode Reverse Recovery Charge Qrr Ch 1 12 20 nC Ch 2 6 12 Reverse Recovery Fall Time ta Ch 1 11 ns Ch 2 7 Reverse Recovery Rise Time tb Ch 1 9 Ch 2 6 SPECIFICATIONS TJ = 25 °C, unless otherwise noted |
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