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SI4288DY データシート(PDF) 1 Page - Vishay Siliconix |
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SI4288DY データシート(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4288DY Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 www.vishay.com 1 Dual N-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • CCFL Inverter • DC/DC Converter • HDD PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) 40 0.020 at VGS = 10 V 9.2 4.9 0.023 at VGS = 4.5 V 8.6 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4288DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 S1 N-Channel MOSFET D2 G2 S2 N-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 9.2 A TC = 70 °C 7.4 TA = 25 °C 7.4b, c TA = 70 °C 5.9b, c Pulsed Drain Current (10 µs Pulse Width) IDM 50 Source-Drain Current Diode Current TC = 25 °C IS 2.6 TA = 25 °C 1.6b, c Pulsed Source-Drain Current ISM 50 Single Pulse Avalanche Current L = 0.1 mH IAS 10 Single Pulse Avalanche Energy EAS 5 Maximum Power Dissipation TC = 25 °C PD 3.1 W TC = 70 °C 2 TA = 25 °C 2b, c TA = 70 °C 1.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 49 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 30 40 |
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