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SI4340DDY データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI4340DDY
部品情報  Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 67583
S11-0860-Rev. A, 02-Mar-11
Vishay Siliconix
Si4340DDY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
Ch-1
20
V
VGS = 0 V, ID = 250 µA
Ch-2
20
VDS Temperature Coefficient
VDS/TJ
ID = 250 µA
Ch-1
20
mV/°C
ID = 25 mA
Ch-2
22
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = 250 µA
Ch-1
- 4.4
ID = 25 mA
Ch-2
- 4.6
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Ch-1
1
2.5
V
VDS = VGS, ID = 250 µA
Ch-2
1
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Ch-1
100
nA
VDS = 0 V, VGS = ± 20 V
Ch-2
100
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
Ch-1
1
µA
VDS = 20 V, VGS = 0 V
Ch-2
100
VDS = 20 V, VGS = 0 V, TJ = 85 °C
Ch-1
15
VDS = 20 V, VGS = 0 V, TJ = 85 °C
Ch-2
10 000
On-State Drain Currentb
ID(on)
VDS 5 V, VGS = 10 V
Ch-1
20
A
VDS 5 V, VGS = 10 V
Ch-2
30
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 11.5 A
Ch-1
0.0065 0.0085
VGS = 10 V, ID = 15.2 A
Ch-2
0.0060 0.0070
VGS = 4.5 V, ID = 10 A
Ch-1
0.0091 0.0115
VGS = 4.5 V, ID = 14 A
Ch-2
0.0077 0.0095
Forward Transconductanceb
gfs
VDS = 10 V, ID = 11.5 A
Ch-1
28
S
VDS = 10 V, ID = 15.2 A
Ch-2
44
Dynamica
Input Capacitance
Ciss
Channel-1
VDS = 10 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 10 V, VGS = 0 V, f = 1 MHz
Ch-1
862
pF
Ch-2
956
Output Capacitance
Coss
Ch-1
280
Ch-2
363
Reverse Transfer Capacitance
Crss
Ch-1
116
Ch-2
120
Total Gate Charge
Qg
VDS = 10 V, VGS = 10 V, ID = 12 A
Ch-1
17.4
26
nC
VDS = 10 V, VGS = 10 V, ID = 12 A
Ch-2
17.8
27
Channel-1
VDS = 10 V, VGS = 4.5 V, ID = 12 A
Channel-2
VDS = 10 V, VGS = 4.5 V, ID = 12 A
Ch-1
8.1
12.5
Ch-2
8.4
12.5
Gate-Source Charge
Qgs
Ch-1
2.2
Ch-2
2.6
Gate-Drain Charge
Qgd
Ch-1
2.4
Ch-2
2.5
Gate Resistance
Rg
f = 1 MHz
Ch-1
2.2
4.4
Ch-2
2.6
5.2


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