SI4418DY_05 datasheet(2/4 Pages) VISHAY

部品番号	SI4418DY

部品情報	N-Channel 200-V (D-S) MOSFET

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Vishay Siliconix

SPICE Device Model Si4418DY

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.9

V

On-State Drain Current

a

ID(on)

VDS ≥ 5 V, VGS = 10 V

42

A

VGS = 10 V, ID = 3 A

0.111

0.110

Drain-Source On-State Resistance

a

rDS(on)

VGS = 6 V, ID = 2.8 A

0.125

0.120

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 3 A

11

13

S

Forward Voltage

a

VSD

IS = 2.1 A, VGS = 0 V

0.83

0.80

V

Dynamic

b

Total Gate Charge

Qg

21

20

Gate-Source Charge

Qgs

4.5

Gate-Drain Charge

Qgd

VDS = 100 V, VGS = 10 V, ID = 3 A

6.5

nC

Turn-On Delay Time

td(on)

9

15

Rise Time

tr

16

15

Turn-Off Delay Time

td(off)

22

40

Fall Time

tf

VDD = 100 V, RL = 100 Ω

ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω

19

20

ns

Notes

a.

Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

www.vishay.com

Document Number: 72576

S-51095

Rev. B, 13-Jun-05

同様の部品番号 - SI4418DY_05

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI4418DY-E3	69Kb / 5P	N-Channel 200-V (D-S) MOSFET Rev. B, 24-Nov-03
Vishay Siliconix	SI4418DY-T1-E3	69Kb / 5P	N-Channel 200-V (D-S) MOSFET Rev. B, 24-Nov-03

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