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SI4488DY データシート(PDF) 2 Page - Vishay Siliconix |
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SI4488DY データシート(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si4488DY SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.1 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 114 A Drain-Source On-State Resistance a rDS(on) VGS = 10 V, ID = 5 A 0.043 0.041 Ω Forward Transconductance a gfs VDS = 15 V, ID = 5 A 24 18 S Diode Forward Voltage a VSD IS = 2.8 A, VGS = 0 V 0.76 0.75 V Dynamic b Total Gate Charge Qg 31 30 Gate-Source Charge Qgs 8.5 8.5 Gate-Drain Charge Qgd VDS = 75 V, VGS = 10 V, ID = 5 A 8.5 8.5 nC Turn-On Delay Time td(on) 11 12 Rise Time tr 21 7 Turn-Off Delay Time td(off) 39 22 Fall Time tf VDD = 75 V, RL = 15 Ω ID ≅ 5 A, VGEN = 10 V, RG = 6 Ω 41 10 Source-Drain Reverse Recovery Time trr IF = 2.8 A, di/dt = 100 A/µs 37 40 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 71684 S-60245 Rev. B, 20-Feb-06 |
同様の部品番号 - SI4488DY_06 |
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同様の説明 - SI4488DY_06 |
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