SI4500BDY_09 datasheet(1/12 Pages) VISHAY

部品番号	SI4500BDY

部品情報	Complementary MOSFET Half-Bridge (N- and P-Channel)

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Vishay Siliconix

Si4500BDY

Document Number: 72281

S09-0705-Rev. D, 27-Apr-09

www.vishay.com

1

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

N-Channel

20

0.020 at VGS = 4.5 V

9.1

0.030 at VGS = 2.5 V

7.5

P-Channel

- 20

0.060 at VGS = - 4.5 V

- 5.3

0.100 at VGS = - 2.5 V

- 4.1

S1

D

G1

D

S2

D

G2

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free)

Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S2

G2

G1

S1

D

Notes:

a. Surface Mounted on FR4 board.

b. t

≤ 10 s.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

10 s

Steady State

10 s

Steady State

Drain-Source Voltage

VDS

20

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a,b

TA = 25 °C

ID

9.1

6.6

- 5.3

- 3.8

A

TA = 70 °C

7.3

5.3

- 4.9

- 3.1

Pulsed Drain Current

IDM

30

- 20

Continuous Source Current (Diode Conduction)a,b

IS

2.1

1.1

- 2.1

- 1.1

Maximum Power Dissipationa,b

TA = 25 °C

PD

2.5

1.3

2.5

1.3

W

TA = 70 °C

1.6

0.8

1.6

0.8

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

40

50

41

50

°C/W

Steady State

75

95

75

95

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

20

22

23

26

同様の部品番号 - SI4500BDY_09

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI4500BDY	124Kb / 9P	Complementary MOSFET Half-Bridge (N- and P-Channel) Rev. C, 12-Jun-06

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