SI4511DY_09 datasheet(6/12 Pages) VISHAY

部品番号	SI4511DY

部品情報	N- and P-Channel 20-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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Document Number: 72223

S09-0867-Rev. E, 18-May-09

Vishay Siliconix

Si4511DY

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

8

16

24

32

40

0.0

0.4

0.8

1.2

1.6

2.0

VGS = 5 V thru 3.5 V

VDS - Drain-to-Source Voltage (V)

2.5 V

2 V

3 V

1.5 V

0.00

0.02

0.04

0.06

0.08

0.10

0

8

16

24

32

40

ID - Drain Current (A)

VGS = 4.5 V

VGS = 2.5 V

0

1

2

3

4

5

0

3

6

9

12

15

18

VDS = 10 V

ID = 6.2 A

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

8

16

24

32

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

TC = - 55 °C

125 °C

25 °C

VGS - Gate-to-Source Voltage (V)

0

500

1000

1500

2000

2500

3000

04

8

12

16

20

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 6.2 A

TJ - Junction Temperature (°C)

同様の部品番号 - SI4511DY_09

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Vishay Siliconix	SI4511DY	127Kb / 9P	N- and P-Channel 20-V (D-S) MOSFET Rev. D, 12-Jun-06

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