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SI4532CDY-T1-GE3 データシート(PDF) 11 Page - Vishay Siliconix |
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SI4532CDY-T1-GE3 データシート(HTML) 11 Page - Vishay Siliconix |
11 / 15 page Document Number: 64805 S11-0652-Rev. B, 11-Apr-11 www.vishay.com 11 Vishay Siliconix Si4532CDY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64805. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.2 0.1 Square WavePulse Duration (s) 1 0.1 0.01 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 110 °C/W 3. TJM -TA =PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 Duty Cycle = 0.5 Square WavePulse Duration (s) 1 0.1 0.01 0.05 0.02 Single Pulse |
同様の部品番号 - SI4532CDY-T1-GE3 |
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同様の説明 - SI4532CDY-T1-GE3 |
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