SI4564DY-T1-GE3 datasheet(1/12 Pages) VISHAY

部品番号	SI4564DY-T1-GE3

部品情報	N- and P-Channel 40 V (D-S) MOSFET

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Vishay Siliconix

Si4564DY

Document Number: 65922

S10-0455-Rev. B, 22-Feb-10

www.vishay.com

1

N- and P-Channel 40 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook PCs

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

N-Channel

40

0.0175 at VGS = 10 V

10

9.8

0.020 at VGS = 4.5 V

9.2

P-Channel

- 40

0.021 at VGS = - 10 V

- 9.2

21.7

0.028 at VGS = - 4.5 V

- 7.4

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

D1

G1

S1

S2

G2

D2

P-Channel MOSFET

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

40

- 40

V

Gate-Source Voltage

VGS

± 16

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

10

- 9.2

A

TC = 70 °C

8- 7.4

TA = 25 °C

8.0b, c

- 7.2b, c

TA = 70 °C

6.2b, c

- 5.8b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

40

- 40

Source-Drain Current Diode Current

TC = 25 °C

IS

2.6

- 2.6

TA = 25 °C

1.6b, c

- 1.6b, c

Pulsed Source-Drain Current

ISM

40

- 40

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

- 20

Single Pulse Avalanche Energy

EAS

520

mJ

Maximum Power Dissipation

TC = 25 °C

PD

3.1

3.2

W

TC = 70 °C

22.1

TA = 25 °C

2b, c

TA = 70 °C

1.28b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

50

62.5

47

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

30

40

29

38

同様の部品番号 - SI4564DY-T1-GE3

メーカー	部品番号	データシート	部品情報
Vishay Telefunken	SI4564DY	303Kb / 15P	N- and P-Channel 40 V (D-S) MOSFET
VBsemi Electronics Co.,...	SI4564DY	1Mb / 14P	N- and P-Channel 40V (D-S) MOSFET
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同様の説明 - SI4564DY-T1-GE3

メーカー	部品番号	データシート	部品情報
Vishay Telefunken	SI4564DY	303Kb / 15P	N- and P-Channel 40 V (D-S) MOSFET
VBsemi Electronics Co.,...	STU310DH	1Mb / 13P	N- and P-Channel 40 V (D-S) MOSFET
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	SI3529DV	151Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET Rev. C, 02-Nov-09

More results

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