SI4620DY-T1-E3 datasheet(1/13 Pages) VISHAY

部品番号	SI4620DY-T1-E3

部品情報	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Vishay Siliconix

Si4620DY

Document Number: 73862

S09-1341-Rev. D, 13-Jul-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

LITTLE FOOT®

Plus Power MOSFET

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Applications

- Ideal for Boost Circuits

• HDD Driver

MOSFET PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

30

0.035 at VGS = 10 V

7.4

4.2 nC

0.052 at VGS = 4.5 V

6.1

SCHOTTKY PRODUCT SUMMARY

VKA (V)

VF (V)

Diode Forward Voltage

IF (A)

a

30

0.470 at 3 A

3

AK

S

D

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4620DY-T1-E3 (Lead (Pb)-free)

Si4620DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

K

A

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage (MOSFET)

VDS

30

V

Reverse Voltage (Schottky)

VKA

30

Gate-Source Voltage (MOSFET)

VGS

± 20

Continuous Drain Current (TJ = 150 °C) (MOSFET)

TC = 25 °C

ID

7.5

A

TC = 70 °C

6

TA = 25 °C

6

TA = 70 °C

4.8

Pulsed Drain Current (MOSFET)

IDM

40

Continuous Source Current (MOSFET Diode Conduction)

TC = 25 °C

IS

2.6

TA = 25 °C

1.7a, b

Average Forward Current (Schottky)

IF

3

Pulsed Forward Current (Schottky)

IFM

8

Maximum Power Dissipation (MOSFET)

TC = 25 °C

PD

3.1

W

TC = 70 °C

2

TA = 25 °C

2a, b

TA = 70 °C

1.3a, b

Maximum Power Dissipation (Schottky)

TC = 25 °C

3

TC = 70 °C

1.9

TA = 25 °C

1.8

TA = 70 °C

1.1

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

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