データシートサーチシステム |
|
SI4752DY-T1-GE3 データシート(PDF) 2 Page - Vishay Siliconix |
|
SI4752DY-T1-GE3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 66819 S10-2008-Rev. A, 06-Sep-10 Vishay Siliconix Si4752DY New Product Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 30 V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID= 1 mA 1.0 2.2 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 0.018 0.15 mA VDS = 30 V, VGS = 0 V, TJ = 100 °C 2.0 20 On -State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 10 A 0.0045 0.0055 VGS = 4.5 V, ID = 7 A 0.0063 0.0076 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 45 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 1700 pF Output Capacitance Coss 410 Reverse Transfer Capacitance Crss 130 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 28.5 43 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 13.8 21 Gate-Source Charge Qgs 4.2 Gate-Drain Charge Qgd 3.8 Gate Resistance Rg f = 1 MHz 0.3 1.4 2.8 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 18 35 ns Rise Time tr 15 30 Turn-Off Delay Time td(off) 25 50 Fall Time tf 816 Turn-On Delay Time td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 11 22 Rise Time tr 12 24 Turn-Off Delay Time td(off) 25 50 Fall Time tf 816 Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 5.6 A Pulse Diode Forward Currenta ISM 80 Body Diode Voltage VSD IS = 3 A 0.46 0.65 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 23 45 ns Body Diode Reverse Recovery Charge Qrr 12 24 nC Reverse Recovery Fall Time ta 11 ns Reverse Recovery Rise Time tb 12 |
同様の部品番号 - SI4752DY-T1-GE3 |
|
同様の説明 - SI4752DY-T1-GE3 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |