SI4752DY-T1-GE3 datasheet(2/10 Pages) VISHAY

部品番号	SI4752DY-T1-GE3

部品情報	N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Document Number: 66819

S10-2008-Rev. A, 06-Sep-10

Vishay Siliconix

Si4752DY

New Product

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 1 mA

30

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID= 1 mA

1.0

2.2

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

0.018

0.15

mA

VDS = 30 V, VGS = 0 V, TJ = 100 °C

2.0

20

On -State Drain Currenta

ID(on)

VDS  5 V, VGS = 10 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 10 A

0.0045

0.0055



VGS = 4.5 V, ID = 7 A

0.0063

0.0076

Forward Transconductancea

gfs

VDS = 15 V, ID = 10 A

45

S

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

1700

pF

Output Capacitance

Coss

410

Reverse Transfer Capacitance

Crss

130

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 10 A

28.5

43

nC

VDS = 15 V, VGS = 4.5 V, ID = 10 A

13.8

21

Gate-Source Charge

Qgs

4.2

Gate-Drain Charge

Qgd

3.8

Gate Resistance

Rg

f = 1 MHz

0.3

1.4

2.8



Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 

ID  10 A, VGEN = 4.5 V, Rg = 1 

18

35

ns

Rise Time

tr

15

30

Turn-Off Delay Time

td(off)

25

50

Fall Time

tf

816

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 

ID  10 A, VGEN = 10 V, Rg = 1 

11

22

Rise Time

tr

12

24

Turn-Off Delay Time

td(off)

25

50

Fall Time

tf

816

Drain-Source Body Diode and Schottky Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

5.6

A

Pulse Diode Forward Currenta

ISM

80

Body Diode Voltage

VSD

IS = 3 A

0.46

0.65

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

23

45

ns

Body Diode Reverse Recovery Charge

Qrr

12

24

nC

Reverse Recovery Fall Time

ta

11

ns

Reverse Recovery Rise Time

tb

12

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