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SI4838BDY-T1-GE3 データシート(PDF) 4 Page - Vishay Siliconix |
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SI4838BDY-T1-GE3 データシート(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 68964 S-82662-Rev. A, 03-Nov-08 Vishay Siliconix Si4838BDY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ =25 °C - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =5mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.003 0.006 0.009 0.012 0.015 0 1234 5 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =15A 0 34 68 102 136 170 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) DC 10 ms 0.1 1 10 10 TA =25 °C Single Pulse Limited byRDS(on)* 1ms BVDSS Limited 100 ms 1 s 10 s * VGS > minimum VGS at whicht RDS(on) is specified |
同様の部品番号 - SI4838BDY-T1-GE3 |
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同様の説明 - SI4838BDY-T1-GE3 |
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