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SI4904DY-T1-E3 データシート(PDF) 1 Page - Vishay Siliconix |
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SI4904DY-T1-E3 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4904DY Document Number: 73793 S09-0540-Rev. C, 06-Apr-09 www.vishay.com 1 Dual N-Channel 40-V MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • UIS Tested APPLICATIONS • CCFL Inverter PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) 40 0.016 at VGS = 10 V 8 56 0.019 at VGS = 4.5 V 8 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4904DY-T1-E3 (Lead (Pb)-free) Si4904DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 8 A TC = 70 °C 8 TA = 25 °C 8b, c TA = 70 °C 6.5b, c Pulsed Drain Current (10 µs Pulse Width) IDM 20 Source-Drain Current Diode Current TC = 25 °C IS 2.7 TA = 25 °C 1.6b, c Pulsed Source-Drain Current ISM 20 Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 Maximum Power Dissipation TC = 25 °C PD 3.25 W TC = 70 °C 2.10 TA = 25 °C 2.0b, c TA = 70 °C 1.25b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 45 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 29 38 |
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