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SI4946BEY-T1-GE3 データシート(PDF) 1 Page - Vishay Siliconix |
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SI4946BEY-T1-GE3 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4946BEY Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 www.vishay.com 1 Dual N-Channel 60-V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) 60 0.041 at VGS = 10 V 6.5 9.2 nC 0.052 at VGS = 4.5 V 5.8 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free) Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6.5 A TC = 70 °C 5.5 TA = 25 °C 5.3a, b TA = 70 °C 4.4a, b Pulsed Drain Current IDM 30 Continuous Source Drain Diode Current TC = 25 °C IS 3.1 TA = 25 °C 2a, b Avalanche Current L = 0 1 mH IAS 12 Single-Pulse Avalanche Energy EAS 7.2 mJ Maximum Power Dissipation TC = 25 °C PD 3.7 W TC = 70 °C 2.6 TA = 25 °C 2.4a, b TA = 70 °C 1.7a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 50 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 33 41 |
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