SI5513CDC-T1-GE3 datasheet(2/16 Pages) VISHAY

部品番号	SI5513CDC-T1-GE3

部品情報	N- and P-Channel 20 V (D-S) MOSFET

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Document Number: 68806

S10-0547-Rev. C, 08-Mar-10

Vishay Siliconix

Si5513CDC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

20

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 20

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

23.7

mV/°C

ID = - 250 µA

P-Ch

- 19.5

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 3.5

ID = - 250 µA

P-Ch

2.8

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

1.5

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.6

- 1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

N-Ch

100

nA

P-Ch

- 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

1

µA

VDS = - 20 V, VGS = 0 V

P-Ch

- 1

VDS = 20 V, VGS = 0 V, TJ = 55 °C

N-Ch

10

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

N-Ch

10

A

VDS ≤ - 5 V, VGS = - 4.5 V

P-Ch

- 8

Drain-Source On-State Resistanceb

RDS(on)

VGS = 4.5 V, ID = 4.4 A

N-Ch

0.045

0.055

Ω

VGS = - 4.5 V, ID = - 2.4 A

P-Ch

0.120

0.150

VGS = 2.5 V, ID = 3.6 A

N-Ch

0.065

0.085

VGS = - 2.5 V, ID = - 1.9 A

P-Ch

0.204

0.255

Forward Transconductanceb

gfs

VDS = 10 V, ID = 4.4 A

N-Ch

12

S

VDS = - 10 V, ID = - 2.4 A

P-Ch

5

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 10 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 10 V, VGS = 0 V, f = 1 MHz

N-Ch

285

pF

P-Ch

252

Output Capacitance

Coss

N-Ch

65

P-Ch

62

Reverse Transfer Capacitance

Crss

N-Ch

30

P-Ch

45

Total Gate Charge

Qg

VDS = 10 V, VGS = 5 V, ID = 4.4 A

N-Ch

2.8

4.2

nC

VDS = - 10 V, VGS = - 5 V, ID = - 2.4 A

P-Ch

3.9

5.6

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 4.4 A

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 2.4 A

N-Ch

2.6

3.9

P-Ch

3.6

5.4

Gate-Source Charge

Qgs

N-Ch

0.7

P-Ch

0.6

Gate-Drain Charge

Qgd

N-Ch

0.5

P-Ch

1.2

Gate Resistance

Rg

f = 1 MHz

N-Ch

0.6

3

6

Ω

P-Ch

1.3

6.5

13

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