データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

SI7629DN-T1-GE3 データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI7629DN-T1-GE3
部品情報  P-Channel 20 V (D-S) MOSFET
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7629DN-T1-GE3 データシート(HTML) 2 Page - Vishay Siliconix

  SI7629DN-T1-GE3 Datasheet HTML 1Page - Vishay Siliconix SI7629DN-T1-GE3 Datasheet HTML 2Page - Vishay Siliconix SI7629DN-T1-GE3 Datasheet HTML 3Page - Vishay Siliconix SI7629DN-T1-GE3 Datasheet HTML 4Page - Vishay Siliconix SI7629DN-T1-GE3 Datasheet HTML 5Page - Vishay Siliconix SI7629DN-T1-GE3 Datasheet HTML 6Page - Vishay Siliconix SI7629DN-T1-GE3 Datasheet HTML 7Page - Vishay Siliconix SI7629DN-T1-GE3 Datasheet HTML 8Page - Vishay Siliconix SI7629DN-T1-GE3 Datasheet HTML 9Page - Vishay Siliconix Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 13 page
background image
www.vishay.com
2
Document Number: 70556
S10-1538-Rev. A, 19-Jul-10
Vishay Siliconix
Si7629DN
New Product
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 13
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
3.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.4
- 1.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
- 30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 20 A
0.0038
0.0046
VGS = - 4.5 V, ID = - 15 A
0.0051
0.0062
VGS = - 2.5 V, ID = - 10 A
0.0097
0.0117
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 20 A
64
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
5790
pF
Output Capacitance
Coss
700
Reverse Transfer Capacitance
Crss
705
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 10 A
118
177
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A
59
88
Gate-Source Charge
Qgs
9.2
Gate-Drain Charge
Qgd
17.1
Gate Resistance
Rg
f = 1 MHz
0.4
2.2
4
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
35
60
ns
Rise Time
tr
38
65
Turn-Off Delay Time
td(off)
75
130
Fall Time
tf
28
55
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
13
25
Rise Time
tr
816
Turn-Off Delay Time
td(off)
80
150
Fall Time
tf
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 35
A
Pulse Diode Forward Current
ISM
- 80
Body Diode Voltage
VSD
IS = - 4 A, VGS = 0 V
- 0.70
- 1.1
V
Body Diode Reverse Recovery Time
trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
36
55
ns
Body Diode Reverse Recovery Charge
Qrr
25
40
nC
Reverse Recovery Fall Time
ta
15
ns
Reverse Recovery Rise Time
tb
21


同様の部品番号 - SI7629DN-T1-GE3

メーカー部品番号データシート部品情報
logo
Vishay Siliconix
SI7629DN VISHAY-SI7629DN_V01 Datasheet
577Kb / 13P
   P-Channel 20 V (D-S) MOSFET
01-Jan-2022
More results

同様の説明 - SI7629DN-T1-GE3

メーカー部品番号データシート部品情報
logo
Vishay Siliconix
SI9400DY VISHAY-SI9400DY Datasheet
58Kb / 4P
   P-Channel 20-V (D-S) MOSFET
Rev. K, 02-Mar-98
SI9424BDY VISHAY-SI9424BDY Datasheet
44Kb / 5P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 07-Oct-02
SI8407DB VISHAY-SI8407DB Datasheet
69Kb / 6P
   P-Channel 20-V (D-S) MOSFET
Rev. B, 17-Jan-05
SI7401DN VISHAY-SI7401DN Datasheet
240Kb / 3P
   P-Channel 20-V (D-S) MOSFET
31-May-01
SI7403BDN VISHAY-SI7403BDN Datasheet
106Kb / 8P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 21-Mar-05
SIS407DN-T1-GE3 VISHAY-SIS407DN-T1-GE3 Datasheet
548Kb / 13P
   P-Channel 20 V (D-S) MOSFET
Rev. B, 06-Sep-10
SI4477DY-T1-GE3 VISHAY-SI4477DY-T1-GE3 Datasheet
261Kb / 10P
   P-Channel 20-V (D-S) MOSFET
Rev. A, 18-May-09
SIA431DJ VISHAY-SIA431DJ Datasheet
221Kb / 9P
   P-Channel 20-V (D-S) MOSFET
Rev. B, 21-May-12
SI1077X VISHAY-SI1077X Datasheet
183Kb / 8P
   P-Channel 20 V (D-S) MOSFET
Rev. A, 24-Dec-12
SI5457DC VISHAY-SI5457DC Datasheet
244Kb / 11P
   P-Channel 20 V (D-S) MOSFET
Rev. A, 06-Sep-10
logo
Analog Power
AM4421P ANALOGPOWER-AM4421P Datasheet
423Kb / 5P
   P-Channel 20-V (D-S) MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com