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SI7629DN-T1-GE3 データシート(PDF) 2 Page - Vishay Siliconix |
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SI7629DN-T1-GE3 データシート(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 70556 S10-1538-Rev. A, 19-Jul-10 Vishay Siliconix Si7629DN New Product Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 13 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 3.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 20 A 0.0038 0.0046 VGS = - 4.5 V, ID = - 15 A 0.0051 0.0062 VGS = - 2.5 V, ID = - 10 A 0.0097 0.0117 Forward Transconductancea gfs VDS = - 10 V, ID = - 20 A 64 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 5790 pF Output Capacitance Coss 700 Reverse Transfer Capacitance Crss 705 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 10 A 118 177 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A 59 88 Gate-Source Charge Qgs 9.2 Gate-Drain Charge Qgd 17.1 Gate Resistance Rg f = 1 MHz 0.4 2.2 4 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 4.5 V, Rg = 1 35 60 ns Rise Time tr 38 65 Turn-Off Delay Time td(off) 75 130 Fall Time tf 28 55 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 10 V, Rg = 1 13 25 Rise Time tr 816 Turn-Off Delay Time td(off) 80 150 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 35 A Pulse Diode Forward Current ISM - 80 Body Diode Voltage VSD IS = - 4 A, VGS = 0 V - 0.70 - 1.1 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 36 55 ns Body Diode Reverse Recovery Charge Qrr 25 40 nC Reverse Recovery Fall Time ta 15 ns Reverse Recovery Rise Time tb 21 |
同様の部品番号 - SI7629DN-T1-GE3 |
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同様の説明 - SI7629DN-T1-GE3 |
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