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SI7720DN データシート(PDF) 6 Page - Vishay Siliconix

部品番号 SI7720DN
部品情報  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
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Document Number: 68787
S-81716-Rev. A, 04-Aug-08
Vishay Siliconix
Si7720DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
11
22
33
44
55
0
255075
100
125
150
TC - Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
13
26
39
52
65
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100
125
150
TA -Ambient Temperature (°C)


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